| PART |
Description |
Maker |
| M29W640GT90NA6E M29W640GT90NA6F M29W640GT90NB6E M2 |
64 Mbit (8Mb x8 or 4Mb x16, Page) 3V supply Flash memory
|
Numonyx B.V
|
| M58LW064D110N6P |
64 MBIT(8MB X8, 4MB X16, UNIFORM BLOCK)3V SUPPLY FLASH MEMORY
|
ST Microelectronics
|
| M29W640DB M29W640DB70N1E M29W640DB70N1F M29W640DB7 |
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory
|
STMicroelectronics
|
| M29DW640F70N1 M29DW640F70N1E M29DW640F70N1F M29DW6 |
64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
|
Numonyx B.V
|
| M36W0R6040T0 M36W0R6040B0ZAQF M36W0R6040T0ZAQF M36 |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package
|
ST Microelectronics
STMicroelectronics
|
| M36W0R6030T0ZAQ M36W0R6030B0ZAQ M36W0R6030B0 M36W0 |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
|
http://
STMicroelectronics
|
| M27V320-150N6 M27V320 M27V320-100M1 M27V320-100M6 |
2.5-V/3.3-V 20-Bit Buffers/Drivers With 3-State Outputs 56-SSOP -40 to 85 32兆位4Mb的x8或检察官办公室的2Mb x16存储
2.5-V/3.3-V 20-Bit Buffers/Drivers With 3-State Outputs 56-TVSOP -40 to 85
32 Mbit 4Mb x8 or 2Mb x16 OTP EPROM
32 MBIT (4MB X8 OR 2MB X16) OTP EPROM
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M69KB128AA |
128 Mbit (8Mb x16) 1.8V Supply Burst PSRAM
|
STMicroelectronics
|
| M28W640CB M28W640CT |
64 MBIT (4MB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY
|
SGS Thomson Microelectronics
|
| M29KDCL3-32T M29KW064E90N1T M29KW064E90ZA1T |
64 Mbit 4Mb x16, Uniform Block 3V Supply LightFlash Memory
64 Mbit 4Mb x16, Uniform Block 3V Supply LightFlash?Memory
|
STMicroelectronics
|
| M29W320E M29W320EB70N1 M29W320ET70N1 M29W320ET90ZE |
32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
